Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions: Applied Physics Letters: Vol 104, No 19
Interface characterization of atomic layer deposited Al2O3 on m-plane GaN
IETS spectrum and trap energy level within the Al2O3 band gap. (a)... | Download Scientific Diagram
The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
Electronic structure and bandgap of γ-Al2O3 compound using mBJ exchange potential | SpringerLink
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS
Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulators from Internal Photoemission - Shlyakhov - 2019 - physica status solidi (a) - Wiley Online Library
The origin of negative charging in amorphous Al2O3 films: the role of native defects
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16
Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study - ScienceDirect
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
